pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents

Titlepn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents
Publication TypeJournal Article
Year of Publication2010
AuthorsHurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck
JournalApplied Physics Letters
Volume97
Pagination222113