Publications
] , "β-(Al ${$sub x$}$ Ga ${$sub 1- x$}$)${$sub 2$}$ O ${$sub 3$}$/Ga ${$sub 2$}$ O ${$sub 3$}$(010) heterostructures grown on β-Ga ${$sub 2$}$ O ${$sub 3$}$(010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 33, no. 4, 2015.
, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
, "Antiphase boundaries and rotation domains in In2O3 (001) films grown on yttria-stabilized zirconia (001)", Journal of Applied Crystallography, vol. 47, no. 1: International Union of Crystallography, pp. 443–448, 2014.
, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.
, "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
, "Auger effect identified as main cause of efficiency droop in leds", SPIE Newsroom, pp. 1–4, 2014.
, "Carrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence", Applied Physics Letters, vol. 105, no. 11: AIP Publishing, pp. 111108, 2014.
, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
, "Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 133702, 2014.
, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
, "Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy", Physical Review B, vol. 89, no. 23: APS, pp. 235124, 2014.
, "Direct Determination of Energy Band Alignments of Ni/Al 2 O 3/GaN MOS Structures Using Internal Photoemission Spectroscopy", Journal of electronic materials, vol. 43, no. 4: Springer US, pp. 828–832, 2014.
, "Effect of heavy Ga doping on defect structure of SnO2 layers", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 87–92, 2014.
, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.
, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
, "Es werde Licht–mit Galliumnitrid: der Nobelpreis für Physik 2014", Angewandte Chemie, vol. 126, no. 51: Wiley Online Library, pp. 14198–14200, 2014.
, "Evidence of lateral electric fields in c-plane III-V nitrides via terahertz emission", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 686–689, 2014.
, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.