Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes

TitleAluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
Publication TypeMiscellaneous
Year of Publication2014
AuthorsDa Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck