| Title | Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes |
| Publication Type | Miscellaneous |
| Year of Publication | 2014 |
| Authors | Da Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck |