Carrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence

TitleCarrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence
Publication TypeJournal Article
Year of Publication2014
AuthorsMarcinkevičius, S., K. Gelžinyt\.e, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck
JournalApplied Physics Letters
Volume105
Pagination111108