Publications
] , "Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 103, no. 24: AIP, pp. 241104, 2013.
, "Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films", Physical Review B, vol. 88, no. 8: APS, pp. 085305, 2013.
, "Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates", Journal of Crystal Growth, vol. 382: Elsevier, pp. 80–86, 2013.
, "Energy savings potential of GaN LEDs for energy efficient lighting and future research directions", Asia Communications and Photonics Conference: Optical Society of America, pp. ATh2A–1, 2013.
, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.
, "Gallium nitride based light emitting diodes (LEDs) for energy efficient lighting and displays", Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International: IEEE, pp. 1–13, 2013.
, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
, "Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide", ECS Transactions, vol. 50, no. 9: The Electrochemical Society, pp. 797–800, 2013.
, High output power, high efficiency blue light-emitting diodes, nov # " 14", 2013.
, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
, Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region, apr # " 25", 2013.
, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
, "Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN", Applied Physics Letters, vol. 103, no. 23: AIP, pp. 232108, 2013.
, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
, "Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop", Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on: IEEE, pp. 111–112, 2013.
, "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
, "Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies", Journal of Applied Physics, vol. 113, no. 20: AIP, pp. 204505, 2013.