Publications
] , "In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 104, no. 3: AIP, pp. 033541, 2008.
, "Indium Nitride: A New Material for High Efficiency, Compact, 1550nm Laser-Based Terahertz Sources in Chemical and Biological Detection", International Journal of High Speed Electronics and Systems, vol. 18, no. 01: World Scientific, pp. 3–9, 2008.
, "Influence of growth conditions and polarity on interface-related electron density in InN", Journal of Applied Physics, vol. 104, no. 10: AIP, pp. 103703, 2008.
, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093510, 2008.
, "InGaN/GaN laser diodes on semipolar (10$$\backslash$bar 1$ $$\backslash$bar 1$) bulk GaN substrates", physica status solidi (c), vol. 5, no. 6: WILEY-VCH Verlag, pp. 2108–2110, 2008.
, "Intensity-dependent photoluminescence studies of the electric field in N-face and In-face InN/InGaN multiple quantum wells", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1846–1848, 2008.
, "Impact of $$\backslash$hbox ${$CF$}$ _ ${$4$}$ $ Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9: IEEE, pp. 781–783, 2007.
, "Impact of strain on free-exciton resonance energies in wurtzite AlN", Journal of Applied Physics, vol. 102, no. 12: AIP, pp. 123707, 2007.
, "Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes", Japanese Journal of Applied Physics, vol. 46, no. 12L: IOP Publishing, pp. L1117, 2007.
, "Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method", Applied Physics Letters, vol. 91, no. 25: AIP, pp. 251911, 2007.
, "Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 125–127, 2007.
, "In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN", Applied Physics Letters, vol. 91, no. 16: AIP, pp. 161904, 2007.
, "Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 102, no. 8: AIP, pp. 083546, 2007.
, "Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy", Applied physics letters, vol. 88, no. 8: AIP, pp. 082114, 2006.
, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
, "Improved quality (11 2\= 0) a-plane GaN with sidewall lateral epitaxial overgrowth", Applied physics letters, vol. 88, no. 6: AIP, pp. 061908, 2006.
, "In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry", Journal of applied physics, vol. 99, no. 12: AIP, pp. 124909, 2006.
, Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging: DTIC Document, 2006.
, "In-polar InN grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 89, no. 3: AIP, pp. 032109, 2006.
, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon", Journal of Applied physics, vol. 98, no. 5: AIP, pp. 053704, 2005.
, "Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN", physica status solidi (a), vol. 202, no. 5: Wiley Online Library, pp. 846–849, 2005.
, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts", IEEE electron device letters, vol. 26, no. 5: IEEE, pp. 283–285, 2005.
, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 3: AIP, pp. 374–376, 2004.
, "Improved quantum efficiency in nonpolar (112Ø0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 84, no. 19: AIP, pp. 3768–3770, 2004.
, "Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs", Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes' Late News Papers' volume]: IEEE, pp. 37–38, 2004.