Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

TitleImpact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2006
AuthorsArmstrong, A., C. Poblenz, DS. Green, UK. Mishra, JS. Speck, and SA. Ringel
JournalApplied physics letters
Volume88
Pagination082114