Improved quantum efficiency in nonpolar (112Ø0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

TitleImproved quantum efficiency in nonpolar (112Ø0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
Publication TypeJournal Article
Year of Publication2004
AuthorsKoida, T., SF. Chichibu, T. Sota, MD. Craven, BA. Haskell, JS. Speck, SP. DenBaars, and S. Nakamura
JournalApplied physics letters
Volume84
Pagination3768–3770