Publications
] , "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
, "P-gan/algan/gan enhancement-mode hemts", 64th Device Research Conference (DRC), pp. 163–164, 2006.
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Quantitative observation and discrimination of AlGaN-and GaN-related deep levels in Al Ga N/ Ga N heterostructures using capacitance deep level optical spectroscopy", Applied physics letters, vol. 89, no. 26: AIP, pp. 262116, 2006.
, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
, "Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1562–1567, 2005.
, "Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 63–64, 2005.
, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
, "High-power AlGaN/GaN HEMTs for Ka-band applications", IEEE Electron Device Letters, vol. 26, no. 11: IEEE, pp. 781–783, 2005.
, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon", Journal of Applied physics, vol. 98, no. 5: AIP, pp. 053704, 2005.
, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2411–2414, 2005.
, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
, "Tunnel junctions in GaN/AlN for optoelectronic applications", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 23–24, 2005.
, "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
, "Carbon doping of GaN with CBr 4 in radio-frequency plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 95, no. 12: AIP, pp. 8456–8462, 2004.
, "Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN: C and their Influence on Yellow Luminescence", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.
, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 3: AIP, pp. 374–376, 2004.
, "Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs", Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes' Late News Papers' volume]: IEEE, pp. 37–38, 2004.
, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.