| Title | A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si |
| Publication Type | Journal Article |
| Year of Publication | 2005 |
| Authors | Armstrong, A., A. Arehart, D. Green, JS. Speck, UK. Mishra, and SA. Ringel |
| Journal | physica status solidi (c) |
| Volume | 2 |
| Pagination | 2411–2414 |