Publications

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2018
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
2017
Hwang, D., N. G. Young, B. Yonkee, B. K. Saifaddin, S. P. DenBaars, J. S. Speck, and S. Nakamura, Iii-v micro-led arrays and methods for preparing the same, 2017.
Jackson, C. M., A. R. Arehart, T. J. Grassman, B. McSkimming, J. S. Speck, and S. A. Ringel, "Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces", ECS Journal of Solid State Science and Technology, vol. 6, no. 8: The Electrochemical Society, pp. P489–P494, 2017.
Uždavinys, T. K., D. L. Becerra, R. Ivanov, S. P. DenBaars, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence", Optical Materials Express, vol. 7, no. 9: Optical Society of America, pp. 3116–3123, 2017.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, and B. S. Ooi, "Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes", Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017 Conference on: IEEE, pp. 1–2, 2017.
2016
Foronda, H. M., M. A. Laurent, B. Yonkee, S. Keller, S. P. DenBaars, and J. S. Speck, "Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition", Semiconductor Science and Technology, vol. 31, no. 8: IOP Publishing, pp. 085003, 2016.
Sintonen, S., P. Kivisaari, S. Pimputkar, S. Suihkonen, T. Schulz, J. S. Speck, and S. Nakamura, "Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN", Journal of Crystal Growth, vol. 456: North-Holland, pp. 43–50, 2016.
Suihkonen, S., S. Pimputkar, J. S. Speck, and S. Nakamura, "Infrared absorption of hydrogen-related defects in ammonothermal GaN", Applied Physics Letters, vol. 108, no. 20: AIP Publishing, pp. 202105, 2016.
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch, and J. S. Speck, "Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 235205, 2016.
Fireman, M. N., D. A. Browne, U. K. Mishra, and J. S. Speck, "Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 119, no. 5: AIP Publishing, pp. 055709, 2016.
2015
Kyle, E. C. H., S. W. Kaun, E. C. Young, and J. S. Speck, "Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN", Applied Physics Letters, vol. 106, no. 22: AIP Publishing, pp. 222103, 2015.
Keller, S., C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, et al., "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
2014
Peretti, J., C. Weisbuch, J. Iveland, M. Piccardo, L. Martinelli, and J. S. Speck, "Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, vol. 9003: International Society for Optics and Photonics, pp. 90030Z, 2014.
Hardy, M. T., F. Wu, C-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes", IEEE Photonics Technology Letters, vol. 26, no. 1: IEEE, pp. 43–46, 2014.
Koslow, I. L., C. McTaggart, F. Wu, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1- xN buffer layers", Applied Physics Express, vol. 7, no. 3: IOP Publishing, pp. 031003, 2014.
Yang, T-J., J. S. Speck, and Y-R. Wu, "Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861I, 2014.
Yang, T-J., R. Shivaraman, J. S. Speck, and Y-R. Wu, "The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior", Journal of Applied Physics, vol. 116, no. 11: AIP Publishing, pp. 113104, 2014.
Chakraborty, A., K-C. Kim, J. S. Speck, S. P. DenBaars, and U. K. Mishra, In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In) N, 2014.
Watanabe, K., T. Ohsawa, I. Sakaguchi, O. Bierwagen, M. E. White, M-Y. Tsai, R. Takahashi, E. M. Ross, Y. Adachi, J. S. Speck, et al., "Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions", Applied Physics Letters, vol. 104, no. 13: AIP, pp. 132110, 2014.
2013
Hardy, M. T., C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
Armstrong, AM., K. Kelchner, S. Nakamura, SP. DenBaars, and J. S. Speck, "Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN", Applied Physics Letters, vol. 103, no. 23: AIP, pp. 232108, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Wu, Y-R., S-ting. Yeh, D-W. Lin, C-K. Li, H-C. Kuo, and J. S. Speck, "Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop", Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on: IEEE, pp. 111–112, 2013.
Jackson, C. M., A. R. Arehart, E. Cinkilic, B. McSkimming, J. S. Speck, and S. A. Ringel, "Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies", Journal of Applied Physics, vol. 113, no. 20: AIP, pp. 204505, 2013.
2012
Farrell, R. M., C. J. Neufeld, N. G. Toledo, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura, Iii-nitride flip-chip solar cells, jul # " 19", 2012.

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