Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence

TitleInfluence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence
Publication TypeJournal Article
Year of Publication2017
AuthorsUždavinys, T. K., D. L. Becerra, R. Ivanov, S. P. DenBaars, S. Nakamura, J. S. Speck, and S. Marcinkevičius
JournalOptical Materials Express
Volume7
Pagination3116–3123