Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

TitleInvestigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions
Publication TypeJournal Article
Year of Publication2014
AuthorsWatanabe, K., T. Ohsawa, I. Sakaguchi, O. Bierwagen, M. E. White, M-Y. Tsai, R. Takahashi, E. M. Ross, Y. Adachi, J. S. Speck, and others
JournalApplied Physics Letters
Volume104
Pagination132110