Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model

TitleInfluence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model
Publication TypeConference Paper
Year of Publication2014
AuthorsYang, T-J., J. S. Speck, and Y-R. Wu
Conference NameGallium Nitride Materials and Devices IX
PublisherInternational Society for Optics and Photonics