Publications
Found 56 results
Author Title Type [ Year
] Filters: Author is Speck, James S and First Letter Of Title is E [Clear All Filters]
, "Epitaxial growth of PbTiO 3 thin films on (001) SrTiO 3 from solution precursors", Journal of Materials Research, vol. 10, no. 3: Cambridge University Press, pp. 680–691, 1995.
, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
, Epitaxial Oxide Thin Films II: Symposium Held November 26-30, 1995, Boston, Massachusetts, USA: Materials Research Society, 1996.
, "Erratum: Nonpolar In x Ga 1- x N/G a N (1 1\= 0 0) multiple quantum wells grown on γ- L i A l O 2 (100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306 (R)(2003)]", Physical Review B, vol. 69, no. 12: APS, pp. 129902, 2004.
, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.
, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
, "Electrical and structural characterization of Mg-doped p-type Al 0.69 Ga 0.31 N films on SiC substrate", Journal of Applied Physics, vol. 101, no. 5: AIP, pp. 053717, 2007.
, "Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells", Lasers and Electro-Optics, 2007. CLEO 2007. Conference on: IEEE, pp. 1–2, 2007.
, "Excitation Wavelength Dependence Of Terahertz Emission From Indium Nitride Thin Films", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 513–514, 2007.
, "Effect of MBE growth conditions on multiple electron transport in InN", Journal of Electronic Materials, vol. 37, no. 5: Springer US, pp. 593–596, 2008.
, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
, "Enhanced terahertz radiation from high stacking fault density nonpolar GaN", Applied Physics Letters, vol. 92, no. 24: AIP, pp. 241106, 2008.
, "Effect of indium on the physical vapor transport growth of AlN", Journal of Crystal Growth, vol. 311, no. 4: Elsevier, pp. 1060–1064, 2009.
, "Electroluminescent measurement of the internal quantum efficiency of light emitting diodes", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 181102, 2009.
, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
, "Enhancing the light extraction efficiency of blue semipolar (1011) nitride-based light emitting diodes through surface patterning", Japanese Journal of Applied Physics, vol. 48, no. 3R: IOP Publishing, pp. 030201, 2009.
, "Evaluation of GaN substrates grown in supercritical basic ammonia", Applied Physics Letters, vol. 94, no. 5: AIP, pp. 052109, 2009.
, "Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN", Physical Review B, vol. 84, no. 7: APS, pp. 075315, 2011.
, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
, "Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024101, 2011.
, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.