Publications
Found 44 results
Author Title Type [ Year
] Filters: Author is Speck, JS and First Letter Of Title is D [Clear All Filters]
, "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
, "Dislocations in LD and LED semiconductor heterostructures", Laser Optics (LO), 2016 International Conference: IEEE, pp. R3–11, 2016.
, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
, "Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells", Applied Physics Letters, vol. 107, no. 10: AIP Publishing, pp. 101104, 2015.
, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 5: AIP, pp. 052114, 2012.
, "Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs", Reliability Physics Symposium (IRPS), 2012 IEEE International: IEEE, pp. 2C–3, 2012.
, "Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 99, no. 17: AIP, pp. 171115, 2011.
, "Determination of polarization field in a semipolar (11 2\= 2) In Ga/ Ga N single quantum well using Franz–Keldysh oscillations in electroreflectance", Applied Physics Letters, vol. 94, no. 24: AIP, pp. 241906, 2009.
, "Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 152110, 2009.
, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.
, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes", Applied physics letters, vol. 93, no. 10: AIP, pp. 103502, 2008.
, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
, "Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride", Applied physics letters, vol. 84, no. 17: AIP, pp. 3322–3324, 2004.
, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
, "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy", Compound Semiconductors, 2003. International Symposium on: IEEE, pp. 4–5, 2003.
, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.