Publications

Found 63 results
Author Title Type [ Year(Desc)]
Filters: Author is Shuji Nakamura  [Clear All Filters]
2005
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. Denbaars>, S. Nakamura, and U. K. Mishra, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
2010
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
2013
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
2014
Zhao, Y., F. Wu, T. Jui Yang, Y. Renn Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.
2018
Malkowski, T. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures", Journal of Crystal Growth, vol. 499, pp. 85 - 89, 2018.
2019
Reilly, C. E., B. Bonef, S. Nakamura, J. S. Speck, S. P. DenBaars, and S. Keller, "Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 34, pp. 125002, oct, 2019.
Hamdy, K. W., E. C. Young, A. I. Alhassan, D. L. Becerra, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes", Opt. Express, vol. 27, pp. 8327–8334, Mar, 2019.
SaifAddin, B. K., A. Almogbel, C. J. Zollner, H. Foronda, A. Alyamani, A. Albadri, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC", Semiconductor Science and Technology, vol. 34, pp. 035007, 01/2019.
Lheureux, G., S. Mehari, D. Cohen, P. Chan, H. Zhang, K. Hamdy, C. Reilly, R. Anderson, E. Zeitz, R. Seshadri, et al., "GaN High-Power Lasers for solid-state lighting", OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED): Optical Society of America, 2019.
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
Saifaddin, B. K., M. Iza, H. Foronda, A. Almogbel, C. J. Zollner, F. Wu, A. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, et al., "Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC", Opt. Express, vol. 27, pp. A1074–A1083, Aug, 2019.
Alreesh, M. Abo, P. Von Dollen, T. F. Malkowski, T. Mates, H. Albrithen, S. DenBaars, S. Nakamura, and J. S. Speck, "Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal", Journal of Crystal Growth, vol. 508, pp. 50 - 57, 2019.
Kamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
Kang, C. Hong, G. Liu, C. Lee, O. Alkhazragi, J. M. Wagstaff, K-H. Li, F. Alhawaj, T. Khee Ng, J. S. Speck, S. Nakamura, et al., "Semipolar (202̅1̅) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication", Applied Physics Express, vol. 13, pp. 014001, nov, 2019.
Mehari, S., D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III-nitride laser diodes for solid-state lighting", Novel In-Plane Semiconductor Lasers XVIII: International Society for Optics and Photonics, 2019.
Wong, M. S., C. Lee, D. J. Myers, D. Hwang, J. A. Kearns, T. Li, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation", Applied Physics Express, vol. 12, pp. 097004, aug, 2019.
2020
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
Gandrothula, S., T. Kamikawa, M. Araki, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface", Applied Physics Express, vol. 13, pp. 041003, mar, 2020.
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Alias, E. A., M. E. A. Samsudin, N. Ibrahim, A. J. Mughal, S. P. DenBaars, J. S. Speck, S. Nakamura, and N. Zainal, "Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate", J. Opt. Soc. Am. B, vol. 37, pp. 1614–1619, Jun, 2020.
Wong, M. S., J. A. Kearns, C. Lee, J. M. Smith, C. Lynsky, G. Lheureux, H. Choi, J. Kim, C. Kim, S. Nakamura, et al., "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments", Opt. Express, vol. 28, pp. 5787–5793, Feb, 2020.

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