Publications

Found 14 results
Author Title Type [ Year(Asc)]
Filters: Author is Mazumder, Baishakhi  [Clear All Filters]
2017
Foronda, H. M., B. Mazumder, E. C. Young, M. A. Laurent, Y. Li, S. P. DenBaars, and J. S. Speck, "Analysis of Vegardís law for lattice matching InxAl1- xN to GaN by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 475: North-Holland, pp. 127–135, 2017.
Li, H., B. Mazumder, B. Bonef, S. Keller, S. Wienecke, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Characterization of N-polar AlN in GaN/AlN/(Al, Ga) N heterostructures grown by metal-organic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 11: IOP Publishing, pp. 115004, 2017.
Mazumder, B., S. Broderick, K. Rajan, J. Peralta, H. Foronda, and J. S. Speck, "Field Evaporation Behavior of Ternary Compound Semiconductor In x Al ix N", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 636–637, 2017.
Rolland, N., F. Vurpillot, S. Duguay, B. Mazumder, J. S. Speck, and D. Blavette, "New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint", Microscopy and Microanalysis, vol. 23, no. 2: Cambridge University Press, pp. 247–254, 2017.
Browne, D. A., M. N. Fireman, B. Mazumder, L. Y. Kuritzky, Y-R. Wu, and J. S. Speck, "Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 2: IOP Publishing, pp. 025010, 2017.
2015
Fireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra, "Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 20: AIP Publishing, pp. 202106, 2015.
Browne, D. A., B. Mazumder, Y-R. Wu, and J. S. Speck, "Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy", Journal of Applied Physics, vol. 117, no. 18: AIP Publishing, pp. 185703, 2015.
Kaun, S. W., B. Mazumder, M. N. Fireman, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, "Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055010, 2015.
2014
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
2013
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 102, no. 11: AIP, pp. 111603, 2013.
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
Mazumder, B., M. Esposto, T. H. Hung, T. Mates, S. Rajan, and J. S. Speck, "Characterization of a dielectric/GaN system using atom probe tomography", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151601, 2013.
2012
Choi, P-P., O. Cojocaru-Mirédin, D. Abou-Ras, R. Caballero, D. Raabe, V. S. Smentkowski, C. Gyung Park, G. Ho Gu, B. Mazumder, M. Hoi Wong, et al., "Atom probe tomography of compound semiconductors for photovoltaic and light-emitting device applications", Microscopy Today, vol. 20, no. 3: Cambridge University Press, pp. 18–24, 2012.