Publications
Found 632 results
Author Title Type [ Year
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, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
, "Status and perspectives of the ammonothermal growth of GaN substrates", Journal of Crystal Growth, vol. 310, no. 5: Elsevier, pp. 876–880, 2008.
, "Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 9: AIP, pp. 093529, 2008.
, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
, "Submicron-thick microcavity InGaN light emitting diodes", Light-Emitting Diodes: Research, Manufacturing, and Applications XII, vol. 6910: International Society for Optics and Photonics, pp. 69100R, 2008.
, "Submicron-thick microcavity InGaN light emitting diodes [6910-27]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6910: International Society for Optical Engineering; 1999, pp. 6910, 2008.
, "Terahertz emission from nonpolar gallium nitride", Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on: IEEE, pp. 1–2, 2008.
, "Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CMAA1, 2008.
, "2.5 λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process", Applied Physics Letters, vol. 91, no. 6: AIP, pp. 061120, 2007.
, "Cantilever Epitaxy of AlN using Hydride Vapor Phase Epitaxy", APS Meeting Abstracts, 2007.
, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.
, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.
, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
, "Demonstration of distributed Bragg Reflectors for deep ultraviolet applications", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L767, 2007.
, "Demonstration of distributed Bragg Reflectors for deep ultraviolet applications", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L767, 2007.
, "Electrical and structural characterization of Mg-doped p-type Al 0.69 Ga 0.31 N films on SiC substrate", Journal of Applied Physics, vol. 101, no. 5: AIP, pp. 053717, 2007.
, "Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells", Lasers and Electro-Optics, 2007. CLEO 2007. Conference on: IEEE, pp. 1–2, 2007.
, "Excitation Wavelength Dependence Of Terahertz Emission From Indium Nitride Thin Films", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 513–514, 2007.
, "A GaN bulk crystal with improved structural quality grown by the ammonothermal method", Nature materials, vol. 6, no. 8: Nature Publishing Group, pp. 568, 2007.
, "Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)", Journal of Crystal Growth, vol. 306, no. 2: Elsevier, pp. 330–338, 2007.
, "Growth of bulk GaN crystals by the basic ammonothermal method", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L889, 2007.
, "Growth of bulk GaN with low dislocation density by the ammonothermal method using polycrystalline GaN nutrient", Japanese journal of applied physics, vol. 46, no. 6L: IOP Publishing, pp. L525, 2007.
, "High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 91, no. 22: AIP, pp. 221905, 2007.
, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
, "Impact of $$\backslash$hbox ${$CF$}$ _ ${$4$}$ $ Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9: IEEE, pp. 781–783, 2007.