| Title | Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors |
| Publication Type | Journal Article |
| Year of Publication | 2008 |
| Authors | Nidhi, S. Rajan, S. Keller, F. Wu, S. P. DenBaars, J. S. Speck, and U. K. Mishra |
| Journal | Journal of Applied Physics |
| Volume | 103 |
| Pagination | 124508 |