High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy

TitleHigh electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2007
AuthorsKoblmüller, G., F. Wu, T. Mates, JS. Speck, S. Fernández-Garrido, and E. Calleja
JournalApplied Physics Letters
Volume91
Pagination221905