2.5 λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

Title2.5 λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
Publication TypeJournal Article
Year of Publication2007
AuthorsChoi, Y-S., M. Iza, E. Matioli, G. Koblmüller, J. S. Speck, C. Weisbuch, and E. L. Hu
JournalApplied Physics Letters
Volume91
Pagination061120