Publications

Found 2098 results
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2021
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Monavarian, M., J. Xu, M. Khoury, F. Wu, P. De Mierry, P. Vennéguès, M. A. Belkin, and J. S. Speck, "Defect Tolerance of Intersubband Transitions in Nonpolar $\mathrmGa\mathrmN/(\mathrmAl,\mathrmGa)\mathrmN$ Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics", Phys. Rev. Appl., vol. 16, pp. 054040, Nov, 2021.
Wong, M. S., N. C. Palmquist, J. Jiang, P. Chan, C. Lee, P. Li, J. Hun Kang, Y. Hyun Baek, C. Hon Kim, D. A. Cohen, et al., "Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 119, 11, 2021.
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wang, J., B. K. Saifaddin, C. J. Zollner, B. Bonef, A. S. Almogbel, Y. Yao, M. Iza, Y. Zhang, M. N. Fireman, E. C. Young, et al., "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
Wang, J., B. K. Saifaddin, C. J. Zollner, B. Bonef, A. S. Almogbel, Y. Yao, M. Iza, Y. Zhang, M. N. Fireman, E. C. Young, et al., "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
Wong, M. S., J. S. Speck, S. Nakamura, and S. P. DenBaars, "High efficiency of III-nitride and AlGaInP micro-light-emitting diodes using atomic layer deposition", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Wong, M. S., J. S. Speck, S. Nakamura, and S. P. DenBaars, "High efficiency of III-nitride and AlGaInP micro-light-emitting diodes using atomic layer deposition", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Li, P., A. David, H. Li, H. Zhang, C. Lynsky, Y. Yang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2\%", Applied Physics Letters, vol. 119, 12, 2021.
Speck, J. S., "Materials progress for the development of beta-Ga2O3 for power electronics", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Li, P., H. Li, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation", Semiconductor Science and Technology, vol. 36, pp. 035019, 02/2021.
Mauze, A., Y. Zhang, T. Itoh, T. E. Mates, H. Peelaers, C. G. Van de Walle, and J. S. Speck, "Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 130, 12, 2021.
Kamikawa, T., S. Gandrothula, H. Li, B. V. Olivia, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
Kamikawa, T., S. Gandrothula, H. Li, B. V. Olivia, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
Chow, Y. C., C. Lynsky, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers", Applied Physics Letters, vol. 119, 11, 2021.
Lynsky, C., R. C. White, Y. Chao Chow, W. Ying Ho, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates", Journal of Crystal Growth, vol. 560-561, pp. 126048, 2021.
Mauze, A., T. Itoh, Y. Zhang, and J. S. Speck, "Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy", Oxide-based Materials and Devices XII: International Society for Optics and Photonics, 2021.
Gandrothula, S., T. Kamikawa, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser", Applied Physics Express, vol. 14, pp. 031002, feb, 2021.
Montgomery, R. H., Y. Zhang, C. Yuan, S. Kim, J. Shi, T. Itoh, A. Mauze, S. Kumar, J. Speck, and S. Graham, "Thermal management strategies for gallium oxide vertical trench-fin MOSFETs", Journal of Applied Physics, vol. 129, pp. 085301, 2021.
Montgomery, R. H., Y. Zhang, C. Yuan, S. Kim, J. Shi, T. Itoh, A. Mauze, S. Kumar, J. Speck, and S. Graham, "Thermal management strategies for gallium oxide vertical trench-fin MOSFETs", Journal of Applied Physics, vol. 129, pp. 085301, 2021.
Shi, J., A. Krishnan, A. F. M. Anha Bhuiyan, Y. Rui Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, et al., "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.
Shi, J., A. Krishnan, A. F. M. Anha Bhuiyan, Y. Rui Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, et al., "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.

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