Publications

Found 2098 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is S  [Clear All Filters]
2023
Marcinkevičius, S., Y. Chao Chow, S. Nakamura, and J. S. Speck, "Effect of Mg doping on carrier recombination in GaN", Journal of Applied Physics, vol. 134, issue 8, 2023.
Marcinkevičius, S., J. Ewing, R. Yapparov, F. Wu, S. Nakamura, and J. S. Speck, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
Hamwey, R., N. Hatui, E. Akso, F. Wu, C. Clymore, S. Keller, J. S. Speck, and U. K. Mishra, "First Demonstration of an N-Polar InAlGaN/GaN HEMT", IEEE Electron Device Letters, vol. 45, issue 3, pp. 328-331, 2023.
Wang, M., S. Mu, J. S. Speck, and C. G. Van de Walle, "First-Principles Study of Twin Boundaries and Stacking Faults in Beta-Ga2O3", Advanced Materials Interfaces, 2023.
M Taib, I. Md, M. A. Ahmad, E. A. Alias, A. I. Alhassan, I. A. Ajia, M. M. Muhammed, I. S. Roqan, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "Growth modification via indium surfactant for InGaN/GaN green LED", Semiconductor Science and Technology, vol. 38, pp. 035025, feb, 2023.
Ewing, J. J., C. Lynsky, M. S. Wong, F. Wu, Y. Chao Chow, P. Shapturenka, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
Ewing, J. J., C. Lynsky, M. S. Wong, F. Wu, Y. Chao Chow, P. Shapturenka, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
Yao, Y., H. Li, M. Wang, P. Li, M. Lam, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
Li, P., H. Li, Y. Yao, K. Shek Qwah, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Li, P., H. Li, Y. Yang, M. S. Wong, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, and S. P. DenBaars, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Ho, W. Ying, Y. Chao Chow, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
Alema, F., T. Itoh, W. Brand, M. Tadjer, A. Osinsky, and J. S. Speck, "N2O grown high Al composition nitrogen doped Beta-(AlGa)2O3/Beta-Ga2O3 using MOCVD", Journal of Vacuum Science and Technology A, vol. 41, issue 4, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Chow, Y. Chao, T. Tak, F. Wu, J. Ewing, S. Nakamura, S. P. DenBaars, Y. Ren Wu, C. Weisbuch, and J. S. Speck, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.

Pages