Publications

Found 384 results
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2023
Ho, W. Ying, A. I. Alhassan, C. Lynsky, Y. Chao Chow, D. J. Myers, S. P. DenBaars, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Detection of hot electrons originating from an upper valley at 1.7 eV above the Γ valley in wurtzite GaN using electron emission spectroscopy", Phys. Rev. B, vol. 107, pp. 035303, Jan, 2023.
Mickevičius, J., E. Valkiūnaitė, Ž. Podlipskas, K. Nomeika, S. Nargelas, G. Tamulaitis, Y.C. Chow, S. Nakamura, J.S. Speck, C. Weisbuch, et al., "Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs", Journal of Luminescence, vol. 257, pp. 119732, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Ho, W. Ying, Y. Chao Chow, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
Sauty, M., N. Alyabyeva, C. Lynsky, Y. Chao Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, and J. Peretti, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.
Ho, W. Ying, C. W. Johnson, T. Tak, M. Sauty, Y. Chao Chow, S. Nakamura, A. Schmid, J. Peretti, C. Weisbuch, and J. S. Speck, "Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM)", Applied Physics Letters, vol. 123, issue 3, 2023.
2020
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Li, P., H. Zhang, H. Li, Y. Zhang, Y. Yao, N. Palmquist, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage", Semiconductor Science and Technology, vol. 35, pp. 125023, oct, 2020.
Khoury, M., H. Li, P. Li, Y. Chao Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, et al., "Polarized monolithic white semipolar (202̅1) InGaN light-emitting diodes grown on high quality (202̅1) GaN/sapphire templates and its application to visible light communication", Nano Energy, vol. 67, pp. 104236, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
Poliani, E., D. Seidlitz, M. Ries, S. J. Choi, J. S. Speck, A. Hoffmann, and M. R. Wagner, "Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride", The Journal of Physical Chemistry C, vol. 124, pp. 28178-28185, 2020.

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