Publications
Found 645 results
Author Title Type [ Year
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, "Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
, "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
, "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs", Applied Physics Letters, vol. 124, issue 18, 04/2024.
, "III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Optics Express, vol. 32, issue 12, 06/2024.
, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.
, "Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation", Physical Review Applied, vol. 21, issue 6, 06/2024.
, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
, "Detection of hot electrons originating from an upper valley at 1.7 eV above the Γ valley in wurtzite GaN using electron emission spectroscopy", Phys. Rev. B, vol. 107, pp. 035303, Jan, 2023.
, "Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs", Journal of Luminescence, vol. 257, pp. 119732, 2023.
, "Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs", Journal of Luminescence, vol. 257, pp. 119732, 2023.
, "Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs", Journal of Luminescence, vol. 257, pp. 119732, 2023.
, "Effect of Mg doping on carrier recombination in GaN", Journal of Applied Physics, vol. 134, issue 8, 2023.
, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
, "Growth modification via indium surfactant for InGaN/GaN green LED", Semiconductor Science and Technology, vol. 38, pp. 035025, feb, 2023.
, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
, "High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization", Optics Express, vol. 31, issue 18, pp. 28649-28657, 2023.
, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
, "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
, "InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%", Applied Physics Express, 2023.
, "Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
, "Origins of the high-energy electroluminescence peaks in long-wavelength (~ 495-685 nm) InGaN light-emitting diodes", Applied Physics Letters, vol. 123, issue 9, 2023.
, "Probing Local Emission Properties in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Microscopy", physica status solidi (b), vol. 260, pp. 2200365, 2023.