Publications

Found 909 results
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2016
Pimputkar, S., T. F. Malkowski, S. Griffiths, A. Espenlaub, S. Suihkonen, J. S. Speck, and S. Nakamura, "Stability of materials in supercritical ammonia solutions", The Journal of Supercritical Fluids, vol. 110: Elsevier, pp. 193–229, 2016.
Myzaferi, A., AH. Reading, DA. Cohen, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes", Applied Physics Letters, vol. 109, no. 6: AIP Publishing, pp. 061109, 2016.
2015
Lee, C., C. Zhang, M. Cantore, R. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation", Summer Topicals Meeting Series (SUM), 2015: IEEE, pp. 228–229, 2015.
Lee, C., C. Zhang, M. Cantore, R. M. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication", Optics express, vol. 23, no. 12: Optical Society of America, pp. 16232–16237, 2015.
Megalini, L., D. L. Becerra, R. M. Farrell, A. Pourhashemi, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. A. Cohen, "Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture", Applied Physics Express, vol. 8, no. 4: IOP Publishing, pp. 042701, 2015.
Nguyen, X. Sang, K. Lin, Z. Zhang, B. McSkimming, AR. Arehart, JS. Speck, SA. Ringel, E. A. Fitzgerald, and SJ. Chua, "Correlation of a generation-recombination center with a deep level trap in GaN", Applied Physics Letters, vol. 106, no. 10: AIP Publishing, pp. 102101, 2015.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, T. Margalith, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
Fireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra, "Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 20: AIP Publishing, pp. 202106, 2015.
Fireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra, "Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 20: AIP Publishing, pp. 202106, 2015.
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
Weisbuch, C., M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, "The efficiency challenge of nitride light-emitting diodes for lighting", physica status solidi (a), vol. 212, no. 5, pp. 899–913, 2015.
Kuritzky, L. Y., D. J. Myers, J. Nedy, K. M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
Browne, D. A., B. Mazumder, Y-R. Wu, and J. S. Speck, "Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy", Journal of Applied Physics, vol. 117, no. 18: AIP Publishing, pp. 185703, 2015.
Pimputkar, S., S. Suihkonen, M. Imade, Y. Mori, JS. Speck, and S. Nakamura, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.
McSkimming, B. M., C. Chaix, and J. S. Speck, "High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 5: AVS, pp. 05E128, 2015.
Gelžinyt\.e, K., R. Ivanov, S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
Ivanov, R., S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
Piccardo, M., J. Iveland, L. Martinelli, S. Nakamura, J. Won Choi, J. S. Speck, C. Weisbuch, and J. Peretti, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
Kuritzky, L., D. Myers, K. Kelchner, S. Nakamura, S. DenBaars, C. Weisbuch, and J. Speck, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-III nitride films deposited on substrates, sep # " 8", 2015.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-III nitride films deposited on substrates, sep # " 8", 2015.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-III nitride films deposited on substrates, sep # " 8", 2015.
Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
Schrimpf, RD., DM. Fleetwood, ST. Pantelides, YS. Puzyrev, S. Mukherjee, RA. Reed, JS. Speck, and UK. Mishra, "Physical mechanisms affecting the reliability of GaN-based high electron mobility transistors", MRS Online Proceedings Library Archive, vol. 1792: Cambridge University Press, 2015.

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