High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

TitleHigh active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2015
AuthorsMcSkimming, B. M., C. Chaix, and J. S. Speck
JournalJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Volume33
Pagination05E128