Publications

Found 909 results
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2023
Ewing, J., C. Lynsky, F. Wu, M. Wong, M. Iza, J. S. Speck, and S. P. DenBaars, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy", APL Materials, vol. 11, 04, 2023.
Ho, W. Ying, A. I. Alhassan, C. Lynsky, Y. Chao Chow, D. J. Myers, S. P. DenBaars, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Detection of hot electrons originating from an upper valley at 1.7 eV above the Γ valley in wurtzite GaN using electron emission spectroscopy", Phys. Rev. B, vol. 107, pp. 035303, Jan, 2023.
Mickevičius, J., E. Valkiūnaitė, Ž. Podlipskas, K. Nomeika, S. Nargelas, G. Tamulaitis, Y.C. Chow, S. Nakamura, J.S. Speck, C. Weisbuch, et al., "Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs", Journal of Luminescence, vol. 257, pp. 119732, 2023.
Marcinkevičius, S., Y. Chao Chow, S. Nakamura, and J. S. Speck, "Effect of Mg doping on carrier recombination in GaN", Journal of Applied Physics, vol. 134, issue 8, 2023.
Marcinkevičius, S., J. Ewing, R. Yapparov, F. Wu, S. Nakamura, and J. S. Speck, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
Hamwey, R., N. Hatui, E. Akso, F. Wu, C. Clymore, S. Keller, J. S. Speck, and U. K. Mishra, "First Demonstration of an N-Polar InAlGaN/GaN HEMT", IEEE Electron Device Letters, vol. 45, issue 3, pp. 328-331, 2023.
Wang, M., S. Mu, J. S. Speck, and C. G. Van de Walle, "First-Principles Study of Twin Boundaries and Stacking Faults in Beta-Ga2O3", Advanced Materials Interfaces, 2023.
M Taib, I. Md, M. A. Ahmad, E. A. Alias, A. I. Alhassan, I. A. Ajia, M. M. Muhammed, I. S. Roqan, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "Growth modification via indium surfactant for InGaN/GaN green LED", Semiconductor Science and Technology, vol. 38, pp. 035025, feb, 2023.
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
2022
Mauze, A., T. Itoh, Y. Zhang, E. Deagueros, F. Wu, and J. S. Speck, "Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis", Journal of Applied Physics, vol. 132, 09, 2022.
Yapparov, R., C. Lynsky, Y. Chao Chow, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Engineering of quantum barriers for efficient InGaN quantum well LEDs", Optica Advanced Photonics Congress 2022: Optica Publishing Group, 2022.
Qwah, K. Shek, E. Farzana, A. Wissel, M. Monavarian, T. Mates, and J. S. Speck, "Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy", APL Materials, vol. 10, 08, 2022.
Qwah, K. Shek, E. Farzana, A. Wissel, M. Monavarian, T. Mates, and J. S. Speck, "Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy", APL Materials, vol. 10, 08, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
Korlacki, R\l., M. Hilfiker, J. Knudtson, M. Stokey, U. Kilic, A. Mauze, Y. Zhang, J. Speck, V. Darakchieva, and M. Schubert, "Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)", Phys. Rev. Appl., vol. 18, pp. 064019, Dec, 2022.
Huynh, K., M. E. Liao, A. Mauze, T. Itoh, X. Yan, J. S. Speck, X. Pan, and M. S. Goorsky, "Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3", APL Materials, vol. 10, 01, 2022.
Marcinkevičius, S., and J. S. Speck, "Ultrafast carrier dynamics in β-Ga2O3", Oxide-based Materials and Devices XIII: International Society for Optics and Photonics, 2022.
Qwah, K. S., M. Monavarian, W. Y. Ho, Y.-R. Wu, and J. S. Speck, "Vertical hole transport through unipolar InGaN quantum wells and double heterostructures", Phys. Rev. Mater., vol. 6, pp. 044602, Apr, 2022.

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