Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells

TitleImpact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells
Publication TypeJournal Article
Year of Publication2015
AuthorsIvanov, R., S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck
JournalApplied Physics Letters
Volume107
Pagination211109