Publications

Found 909 results
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2019
Lheureux, G., S. Mehari, D. Cohen, P. Chan, H. Zhang, K. Hamdy, C. Reilly, R. Anderson, E. Zeitz, R. Seshadri, et al., "GaN High-Power Lasers for solid-state lighting", OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED): Optical Society of America, 2019.
Fireman, M. N., G. L'Heureux, F. Wu, T. Mates, E. C. Young, and J. S. Speck, "High germanium doping of GaN films by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 508, pp. 19 - 23, 2019.
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
Farzana, E., A. Mauze, J. B. Varley, T. E. Blue, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 7, pp. 121102, 2019.
Mauze, A., Y. Zhang, T. Mates, and J. Speck, "Investigation of Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Mauze, A., Y. Zhang, T. Mates, and J. Speck, "Investigation of Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Alreesh, M. Abo, P. Von Dollen, T. F. Malkowski, T. Mates, H. Albrithen, S. DenBaars, S. Nakamura, and J. S. Speck, "Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal", Journal of Crystal Growth, vol. 508, pp. 50 - 57, 2019.
Alreesh, M. Abo, P. Von Dollen, T. F. Malkowski, T. Mates, H. Albrithen, S. DenBaars, S. Nakamura, and J. S. Speck, "Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal", Journal of Crystal Growth, vol. 508, pp. 50 - 57, 2019.
Chmielewski, A., P. Moradifar, L. Miao, K. A. Lopez, Y. Zhang, A. Mauze, J. S. Speck, and N. Alem, "Investigation of the Atomic and Electronic Structure of β-(Al0.2Ga0.8)2O3 Alloys by STEM-EELS", Microscopy and Microanalysis, vol. 25, pp. 2186–2187, 2019.
Chmielewski, A., P. Moradifar, L. Miao, K. A. Lopez, Y. Zhang, A. Mauze, J. S. Speck, and N. Alem, "Investigation of the Atomic and Electronic Structure of β-(Al0.2Ga0.8)2O3 Alloys by STEM-EELS", Microscopy and Microanalysis, vol. 25, pp. 2186–2187, 2019.
Chmielewski, A., P. Moradifar, L. Miao, K. A. Lopez, Y. Zhang, A. Mauze, J. S. Speck, and N. Alem, "Investigation of the Atomic and Electronic Structure of β-(Al0.2Ga0.8)2O3 Alloys by STEM-EELS", Microscopy and Microanalysis, vol. 25, pp. 2186–2187, 2019.
Mauze, A., Y. Zhang, T. Mates, F. Wu, and J. S. Speck, "Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 115, pp. 052102, 2019.
Mauze, A., Y. Zhang, T. Mates, F. Wu, and J. S. Speck, "Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 115, pp. 052102, 2019.
Alema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
Zhang, Y., F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and J. S. Speck, "MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature", APL Materials, vol. 7, pp. 022506, 2019.
Zhang, Y., F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and J. S. Speck, "MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature", APL Materials, vol. 7, pp. 022506, 2019.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, and J. S. Speck, "Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped $\upbeta$-Ga2O3", Applied Physics Express, vol. 12, pp. 044005, mar, 2019.
Kudrawiec, R., L. Janicki, W. M. Linhart, M. A. Mayer, I. D. Sharp, S. Choi, O. Bierwagen, J. S. Speck, and W. Walukiewicz, "Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN", Journal of Applied Physics, vol. 126, pp. 045712, 2019.
Mehari, S., D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III-nitride laser diodes for solid-state lighting", Novel In-Plane Semiconductor Lasers XVIII: International Society for Optics and Photonics, 2019.
Wong, M. S., C. Lee, D. J. Myers, D. Hwang, J. A. Kearns, T. Li, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation", Applied Physics Express, vol. 12, pp. 097004, aug, 2019.
Alema, F., B. Hertog, P. Mukhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. V. Schoenfeld, J. S. Speck, and T. Vogt, "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film", APL Materials, vol. 7, pp. 022527, 2019.
Alema, F., B. Hertog, P. Mukhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. V. Schoenfeld, J. S. Speck, and T. Vogt, "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film", APL Materials, vol. 7, pp. 022527, 2019.
2020
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 117, pp. 152105, 2020.
Wurm, C., E. Ahmadi, F. Wu, N. Hatui, S. Keller, J. Speck, and U. Mishra, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.

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