Publications

Found 374 results
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2013
Wong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, et al., "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.
Kaun, SW., MH. Wong, J. Lu, UK. Mishra, and JS. Speck, "Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN", Electronics Letters, vol. 49, no. 14: IET Digital Library, pp. 893–895, 2013.
Cardwell, DW., A. Sasikumar, AR. Arehart, SW. Kaun, J. Lu, S. Keller, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2013.
2012
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
Lang, J. R., NG. Young, R. M. Farrell, Y-R. Wu, and JS. Speck, "Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells", Applied Physics Letters, vol. 101, no. 18: AIP, pp. 181105, 2012.
Lu, J., Y-L. Hu, D. F. Brown, F. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Charge and Mobility Enhancements in In-Polar InAl (Ga) N/Al (Ga) N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115502, 2012.
Toledo, N. G., D. J. Friedman, R. M. Farrell, E. E. Perl, C-T. Lin, J. E. Bowers, J. S. Speck, and U. K. Mishra, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
Keller, S., J. Lu, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
Hurni, C. A., J. R. Lang, P. G. Burke, and J. S. Speck, "Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102106, 2012.
Browne, D. A., E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, no. 4: AVS, pp. 041513, 2012.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2012.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2012.
Lang, J. R., and J. S. Speck, "NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy", Journal of Crystal Growth, vol. 346, no. 1: North-Holland, pp. 50–55, 2012.
Choi, S-B., S-Y. Bae, D-S. Lee, B. Hyun Kong, H. Koun Cho, J-H. Song, B-J. Ahn, J. F. Keading, S. Nakamura, S. P. DenBaars, et al., "Optical Characterization of Double Peak Behavior in 101Ø1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates", Japanese Journal of Applied Physics, vol. 51, no. 5R: IOP Publishing, pp. 052101, 2012.
Dasgupta, S., J. Lu, J. S. Speck, U. K. Mishra, and others, "Scaled self-aligned N-polar GaN/AlGaN MIS-HEMTs with $ f_ ${$T$}$ $ of 275 GHz", IEEE Electron Device Letters, vol. 33, no. 7: IEEE, pp. 961–963, 2012.
Dasgupta, S., J. Lu, J. S. Speck, U. K. Mishra, and others, "Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm", IEEE Electron Device Letters, vol. 33, no. 6: IEEE, pp. 794–796, 2012.
2011
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN-based MIS-HEMTs", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 211–212, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Bae, SY., DS. Lee, BH. Kong, HK. Cho, JF. Kaeding, S. Nakamura, SP. DenBaars, and JS. Speck, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
Fujiwara, T., R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
Lang, J., C. Neufeld, C. Hurni, S. Cruz, E. Matioli, U. Mishra, and J. Speck, "High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH (3)-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Lang, J. R., CJ. Neufeld, CA. Hurni, SC. Cruz, E. Matioli, UK. Mishra, and JS. Speck, "High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3-based molecular beam epitaxy", Applied Physics Letters, vol. 98, no. 13: AIP, pp. 131115, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, and JS. Speck, "High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm", Applied Physics Letters, vol. 98, no. 20: AIP, pp. 201107, 2011.

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