High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3-based molecular beam epitaxy

TitleHigh external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3-based molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2011
AuthorsLang, J. R., CJ. Neufeld, CA. Hurni, SC. Cruz, E. Matioli, UK. Mishra, and JS. Speck
JournalApplied Physics Letters
Volume98
Pagination131115