NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy

TitleNH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2012
AuthorsLang, J. R., and J. S. Speck
JournalJournal of Crystal Growth
Volume346
Pagination50–55