Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

TitleCarrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
Publication TypeJournal Article
Year of Publication2012
AuthorsLang, J. R., NG. Young, R. M. Farrell, Y-R. Wu, and JS. Speck
JournalApplied Physics Letters
Volume101
Pagination181105