Publications
Found 696 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is K [Clear All Filters]
, "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.
, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
, "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
, "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Quadrupole mass spectrometry desorption analysis of Ga adsorbate on AlN (0001)", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 6: AVS, pp. 1979–1984, 2006.
, "Realization of high hole concentrations in Mg doped semipolar (10 1\= 1\=) GaN", Applied physics letters, vol. 89, no. 20: AIP, pp. 202104, 2006.
, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.
, "2.5 λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process", Applied Physics Letters, vol. 91, no. 6: AIP, pp. 061120, 2007.
, "AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 4L: IOP Publishing, pp. L284, 2007.
, "Cantilever Epitaxy of AlN using Hydride Vapor Phase Epitaxy", APS Meeting Abstracts, 2007.
, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", physica status solidi (c), vol. 4, no. 7: Wiley Online Library, pp. 2423–2427, 2007.
, "CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", ?????????????????????, vol. 2007, no. 2: ??????????????, 2007.
, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.
, "Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L761, 2007.
, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
, "Defect-mediated surface morphology of nonpolar m-plane GaN", Applied physics letters, vol. 90, no. 12: AIP, pp. 121119, 2007.
, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
, "Electrical and structural characterization of Mg-doped p-type Al 0.69 Ga 0.31 N films on SiC substrate", Journal of Applied Physics, vol. 101, no. 5: AIP, pp. 053717, 2007.
, "Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells", Lasers and Electro-Optics, 2007. CLEO 2007. Conference on: IEEE, pp. 1–2, 2007.