Publications
Found 89 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is K and Author is Keller, Stacia [Clear All Filters]
, "Growth of N-polar GaN by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
, "Characterization of N-polar AlN in GaN/AlN/(Al, Ga) N heterostructures grown by metal-organic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 11: IOP Publishing, pp. 115004, 2017.
, "Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 121, no. 20: AIP Publishing, pp. 205702, 2017.
, "Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition", Semiconductor Science and Technology, vol. 31, no. 8: IOP Publishing, pp. 085003, 2016.
, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)", physica status solidi (b), vol. 253, no. 4, pp. 792–792, 2016.
, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades", physica status solidi (b), vol. 253, no. 4, pp. 626–629, 2016.
, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
, "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
, "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
, "Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 102, no. 11: AIP, pp. 111603, 2013.
, "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
, "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
, "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.
, "Charge and Mobility Enhancements in In-Polar InAl (Ga) N/Al (Ga) N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115502, 2012.
, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
, "Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161101, 2012.
, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.