Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells

TitleEffect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
Publication TypeJournal Article
Year of Publication2012
AuthorsHu, Y-L., R. M. Farrell, C. J. Neufeld, M. Iza, S. C. Cruz, N. Pfaff, D. Simeonov, S. Keller, S. Nakamura, S. P. DenBaars, and others
JournalApplied Physics Letters
Volume100
Pagination161101