Publications
Found 220 results
Author Title Type [ Year
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, "Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC", Semiconductor Science and Technology, vol. 34, pp. 035007, 01/2019.
, "Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs", 2019 Compound Semiconductor Week (CSW), May, 2019.
, "Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC", Opt. Express, vol. 27, pp. A1074–A1083, Aug, 2019.
, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
, "Recent progress in AlGaN UV-C LEDs grown on SiC", 2019 Compound Semiconductor Week (CSW), May, 2019.
, "Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 115, pp. 161101, 2019.
, "Developments in AlGaN and UV-C LEDs grown on SiC", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
, "Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes", Journal of Applied Physics, vol. 124, pp. 055703, 2018.
, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
, "Direct measurement of nanoscale lateral carrier diffusion: toward scanning diffusion microscopy", ACS Photonics: American Chemical Society, 2017.
, "Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence", Optical Materials Express, vol. 7, no. 9: Optical Society of America, pp. 3116–3123, 2017.
, "Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane In x Ga 1- x N/Ga N Quantum Wells", Physical Review Applied, vol. 7, no. 6: American Physical Society, pp. 064033, 2017.
, "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells", Applied Physics Letters, vol. 110, no. 3: AIP Publishing, pp. 031109, 2017.
, "Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications", Journal of Crystal Growth, vol. 455: North-Holland, pp. 105–110, 2016.
, "Properties of near-field photoluminescence in green emitting single and multiple semipolar (20< span style=", Optical Materials Express, vol. 6, no. 1: Optical Society of America, pp. 39–45, 2016.
, "Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO", Semiconductor Science and Technology, vol. 30, no. 2: IOP Publishing, pp. 024011, 2015.
, "The efficiency challenge of nitride light-emitting diodes for lighting", physica status solidi (a), vol. 212, no. 5, pp. 899–913, 2015.
, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.
, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.