Publications

Found 220 results
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2019
SaifAddin, B. K., A. Almogbel, C. J. Zollner, H. Foronda, A. Alyamani, A. Albadri, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC", Semiconductor Science and Technology, vol. 34, pp. 035007, 01/2019.
Wang, J., E. Young, B. SaifAddin, C. Zollner, A. Almogbel, M. Fireman, M. Izza, S. Nakamura, S. Denbaars, and J. Speck, "Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs", 2019 Compound Semiconductor Week (CSW), May, 2019.
Saifaddin, B. K., M. Iza, H. Foronda, A. Almogbel, C. J. Zollner, F. Wu, A. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, et al., "Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC", Opt. Express, vol. 27, pp. A1074–A1083, Aug, 2019.
Alema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
Almogbel, A., B. SaifAddin, C. Zollner, M. Iza, H. Albrithen, A. Alyamani, A. Albadri, S. Nakamura, S. Denbaars, and J. Speck, "Recent progress in AlGaN UV-C LEDs grown on SiC", 2019 Compound Semiconductor Week (CSW), May, 2019.
Zollner, C. J., A. Almogbel, Y. Yao, B. K. SaifAddin, F. Wu, M. Iza, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 115, pp. 161101, 2019.
2015
Iza, M., J. S. Speck, S. Nakamura, and S. P. DenBaars, (Al, In, Ga, B) N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE, 2015.
Korhonen, E., V. Prozheeva, F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, et al., "Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO", Semiconductor Science and Technology, vol. 30, no. 2: IOP Publishing, pp. 024011, 2015.
Weisbuch, C., M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, "The efficiency challenge of nitride light-emitting diodes for lighting", physica status solidi (a), vol. 212, no. 5, pp. 899–913, 2015.
Pimputkar, S., S. Suihkonen, M. Imade, Y. Mori, JS. Speck, and S. Nakamura, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.
Gelžinyt\.e, K., R. Ivanov, S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
Ivanov, R., S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
Piccardo, M., J. Iveland, L. Martinelli, S. Nakamura, J. Won Choi, J. S. Speck, C. Weisbuch, and J. Peretti, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.

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