Publications

Found 631 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is H  [Clear All Filters]
2014
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2014.
McSkimming, B. M., F. Wu, T. Huault, C. Chaix, and J. S. Speck, "Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h", Journal of Crystal Growth, vol. 386: Elsevier, pp. 168–174, 2014.
Keller, S., H. Li, M. Laurent, Y. Hu, N. Pfaff, J. Lu, D. F. Brown, N. A. Fichtenbaum, J. S. Speck, S. P. DenBaars, et al., "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al, Ga, In) N, 2014.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al, Ga, In) N, 2014.
Okumura, H., M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, and J. S. Speck, "Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 7, no. 9: IOP Publishing, pp. 095501, 2014.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., Technique for the growth and fabrication of semipolar (Ga, Al, In, B) N thin films, heterostructures, and devices, 2014.
2015
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
Keller, S., C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, et al., "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
Nedy, J. G., N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
Wu, Y-R., C-K. Wu, C-C. Hsu, and J. S. Speck, "Multidimensional Numerical Modeling on the Influence of Random Alloy Fluctuation in InGaN Quantum Well LED to the Transport Behavior", Applied Mathematics and Simulation for Semiconductors, Berlin, WIAS, 03/2015.
Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
Hestroffer, K., F. Wu, H. Li, C. Lund, S. Keller, J. S. Speck, and U. K. Mishra, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
Hsu, P. Shan, K. M. Kelchner, R. M. Farrell, D. A. Haeger, H. Ohta, A. Tyagi, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than+/-15 degrees in the c-direction, 2015.
Hsu, P. Shan, K. M. Kelchner, R. M. Farrell, D. A. Haeger, H. Ohta, A. Tyagi, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than+/-15 degrees in the c-direction, 2015.
Efros, A. L., E. Fortunato, C. Felser, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Efros, A. L., E. Fortunato, C. Felser, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, sep # " 15", 2015.
Xue, J., Y. Zhao, S-H. Oh, W. F. Herrington, J. S. Speck, S. P. DenBaars, S. Nakamura, and R. J. Ram, "Thermally enhanced blue light-emitting diode", Applied Physics Letters, vol. 107, no. 12: AIP Publishing, pp. 121109, 2015.
2016
Hogan, J. E., S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, "Chlorine-based dry etching of β-Ga2O3", Semiconductor Science and Technology, vol. 31, no. 6: IOP Publishing, pp. 065006, 2016.
Hwang, D., B. Yonkee, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Development of c-plane thin-film flip-chip LEDs fabricated by photoelectrochemical (PEC) liftoff", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Hwang, D., B. P. Yonkee, B. Saif Addin, R. M. Farrell, S. Nakamura, J. S. Speck, and S. DenBaars, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.

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