Publications

Found 631 results
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2024
Hendricks, N. S., A. E. Islam, E. A. Sowers, J. Williams, D. M. Dryden, K. J. Liddy, W. Wang, J. S. Speck, and A. J. Green, "Current transport mechanisms of metal/TiO2/Beta-Ga2O3 diodes", Journal of Applied Physics, vol. 135, issue 9, 2024.
Fornos, C., N. Alyabyeva, M. Sauty, W. Ying Ho, Y. Chao Chow, T. Tak, J. S. Speck, C. Weisbuch, Y. Lassailly, A. C. H. Rowe, et al., "Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs", Gallium Nitride Materials and Devices XIX, pp. PC1288608, 03/2024.
Islam, S., AS. Senarath, E. Farzana, DR. Ball, A. Sengupta, NS. Hendricks, A. Bhattacharyya, RA. Reed, EX. Zhang, JS. Speck, et al., "Single-Event Burnout in Vertical Beta-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics", IEEE Transactions on Nuclear Science, 2024.
2023
Ho, W. Ying, Y. Chao Chow, Z. Biegler, K. Shek Qwah, T. Tak, A. Wissel-Garcia, I. Liu, F. Wu, S. Nakamura, and J. S. Speck, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
Ho, W. Ying, A. I. Alhassan, C. Lynsky, Y. Chao Chow, D. J. Myers, S. P. DenBaars, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Detection of hot electrons originating from an upper valley at 1.7 eV above the Γ valley in wurtzite GaN using electron emission spectroscopy", Phys. Rev. B, vol. 107, pp. 035303, Jan, 2023.
Hamwey, R., N. Hatui, E. Akso, F. Wu, C. Clymore, S. Keller, J. S. Speck, and U. K. Mishra, "First Demonstration of an N-Polar InAlGaN/GaN HEMT", IEEE Electron Device Letters, vol. 45, issue 3, pp. 328-331, 2023.
Hamwey, R., N. Hatui, E. Akso, F. Wu, C. Clymore, S. Keller, J. S. Speck, and U. K. Mishra, "First Demonstration of an N-Polar InAlGaN/GaN HEMT", IEEE Electron Device Letters, vol. 45, issue 3, pp. 328-331, 2023.
Tak, T., C. W. Johnson, W. Ying Ho, F. Wu, M. Sauty, S. Rebollo, A. K. Schmid, J. Peretti, Y-R. Wu, C. Weisbuch, et al., "Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy", Physical Review Applied, vol. 20, issue 6, 2023.
Ho, W. Ying, Y. Chao Chow, S. Nakamura, J. Peretti, C. Weisbuch, and J. S. Speck, "Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)", Applied Physics Letters, vol. 122, 2023.
Islam, S., A. S. Senarath, A. Sengupta, E. Xia Zhang, D. R. Ball, D. M. Fleetwood, R. D. Schrimpf, E. Farzana, A. Bhattacharyya, N. S. Hendricks, et al., "Single-Event Burnout by Cf-252 Irradiation in Vertical Beta-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate", Device Research Conference (DRC), pp. 1-2, 2023.
Ho, W. Ying, C. W. Johnson, T. Tak, M. Sauty, Y. Chao Chow, S. Nakamura, A. Schmid, J. Peretti, C. Weisbuch, and J. S. Speck, "Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM)", Applied Physics Letters, vol. 123, issue 3, 2023.
Hendricks, N. S., E. Farzana, A. E. Islam, K. D. Leedy, K. J. Liddy, J. Williams, D. M. Dryden, A. M. Adams, J. S. Speck, K. D. Chabak, et al., "Vertical metal-dielectric-semiconductor diode on (001) Beta-Ga2O3 with high-k TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown", Applied Physics Express, vol. 16, issue 7, 2023.
Farzana, E., S. Roy, N. S. Hendricks, S. Krishnamoorthy, and J. S. Speck, "Vertical PtOx/Pt/Beta-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage", Applied Physics Letters, vol. 123, issue 19, 2023.
2022
Hamdy, S. W., S. P. DenBaars, J. S. Speck, and S. Nakamura, "Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss", Optical Engineering, vol. 61, pp. 027102, 2022.
Ho, C-H., J. S. Speck, C. Weisbuch, and Y-R. Wu, "Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells", Phys. Rev. Appl., vol. 17, pp. 014033, Jan, 2022.
Farzana, E., A. Bhattacharyya, N. S. Hendricks, T. Itoh, S. Krishnamoorthy, and J. S. Speck, "Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes", APL Materials, vol. 10, 11, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
Korlacki, R\l., M. Hilfiker, J. Knudtson, M. Stokey, U. Kilic, A. Mauze, Y. Zhang, J. Speck, V. Darakchieva, and M. Schubert, "Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)", Phys. Rev. Appl., vol. 18, pp. 064019, Dec, 2022.
Huynh, K., M. E. Liao, A. Mauze, T. Itoh, X. Yan, J. S. Speck, X. Pan, and M. S. Goorsky, "Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3", APL Materials, vol. 10, 01, 2022.
Qwah, K. S., M. Monavarian, W. Y. Ho, Y.-R. Wu, and J. S. Speck, "Vertical hole transport through unipolar InGaN quantum wells and double heterostructures", Phys. Rev. Mater., vol. 6, pp. 044602, Apr, 2022.
Farzana, E., F. Alema, T. Itoh, N. Hendricks, A. Mauze, A. Osinsky, and J. Speck, "β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition", Oxide-based Materials and Devices XIII: International Society for Optics and Photonics, 2022.
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.
2021
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Lynsky, C., R. C. White, Y. Chao Chow, W. Ying Ho, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates", Journal of Crystal Growth, vol. 560-561, pp. 126048, 2021.

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