Publications

Found 252 results
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2018
Reparaz, J. S., P. K. da Silva, A. H. Romero, J. Serrano, M. R. Wagner, G. Callsen, S. J. Choi, J. S. Speck, and A. R. Goñi, "Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN", Phys. Rev. B, vol. 98, pp. 165204, Oct, 2018.
Griffiths, S., S. Pimputkar, J. Kearns, T.F. Malkowski, M.F. Doherty, J.S. Speck, and S. Nakamura, "Growth kinetics of basic ammonothermal gallium nitride crystals", Journal of Crystal Growth, vol. 501, pp. 74 - 80, 2018.
Kimmel, A.-C.L., T. F. Malkowski, S. Griffiths, B. Hertweck, T. G. Steigerwald, L. P. Freund, S. Neumeier, M. Göken, J. S. Speck, and E. Schluecker, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
Kimmel, A.-C.L., T. F. Malkowski, S. Griffiths, B. Hertweck, T. G. Steigerwald, L. P. Freund, S. Neumeier, M. Göken, J. S. Speck, and E. Schluecker, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
Myers, D. J., K. Gelžinytė, W. Ying Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, and J. S. Speck, "Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes", Journal of Applied Physics, vol. 124, pp. 055703, 2018.
Borgatti, F., JA. Berger, D. Céolin, J. Sky Zhou, J. J. Kas, M. Guzzo, CF. McConville, F. Offi, G. Panaccione, A. Regoutz, et al., "Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n-doped SnO 2", Physical Review B, vol. 97, no. 15: American Physical Society, pp. 155102, 2018.
2019
Feneberg, M., C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn, "Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift", APL Materials, vol. 7, pp. 022508, 2019.
Feneberg, M., C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn, "Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift", APL Materials, vol. 7, pp. 022508, 2019.
Myers, D. J., K. Gel, A. I. Alhassan, L. Martinelli, J. Peretti, S. Nakamura, C. Weisbuch, and J. S. Speck, "Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop", Phys. Rev. B, vol. 100, pp. 125303, Sep, 2019.
Sayed, I., B. Bonef, W. Liu, S. Chan, J. Georgieva, J. S. Speck, S. Keller, and U. K. Mishra, "Electrical properties and interface abruptness of AlSiO gate dielectric grown on 0001 ¯ N-polar and (0001) Ga-polar GaN", Applied Physics Letters, vol. 115, pp. 172104, 2019.
Baj, M., L. H. Dmowski, A. Kwiatkowski, J. Przybytek, X. Wang, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples", Journal of Applied Physics, vol. 126, pp. 045705, 2019.
Kamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
2021
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Kamikawa, T., S. Gandrothula, H. Li, B. V. Olivia, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
Gandrothula, S., T. Kamikawa, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser", Applied Physics Express, vol. 14, pp. 031002, feb, 2021.
Montgomery, R. H., Y. Zhang, C. Yuan, S. Kim, J. Shi, T. Itoh, A. Mauze, S. Kumar, J. Speck, and S. Graham, "Thermal management strategies for gallium oxide vertical trench-fin MOSFETs", Journal of Applied Physics, vol. 129, pp. 085301, 2021.

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