Publications

Found 2112 results
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2015
Fireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra, "Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 20: AIP Publishing, pp. 202106, 2015.
Yonkee, B. P., R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
Kowsz, SJ., CD. Pynn, SH. Oh, RM. Farrell, JS. Speck, SP. DenBaars, and S. Nakamura, "Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells", Applied Physics Letters, vol. 107, no. 10: AIP Publishing, pp. 101104, 2015.
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
Weisbuch, C., M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, "The efficiency challenge of nitride light-emitting diodes for lighting", physica status solidi (a), vol. 212, no. 5, pp. 899–913, 2015.
Kuritzky, L. Y., D. J. Myers, J. Nedy, K. M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
Browne, D. A., B. Mazumder, Y-R. Wu, and J. S. Speck, "Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy", Journal of Applied Physics, vol. 117, no. 18: AIP Publishing, pp. 185703, 2015.
Pimputkar, S., S. Suihkonen, M. Imade, Y. Mori, JS. Speck, and S. Nakamura, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.
Pimputkar, S., S. Suihkonen, M. Imade, Y. Mori, JS. Speck, and S. Nakamura, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.
Papadogianni, A., M. E. White, J. S. Speck, Z. Galazka, and O. Bierwagen, "Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films", Applied Physics Letters, vol. 107, no. 25: AIP Publishing, pp. 252105, 2015.
McSkimming, B. M., C. Chaix, and J. S. Speck, "High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 5: AVS, pp. 05E128, 2015.
Zhong, H., A. Tyagi, K. J. Vampola, J. S. Speck, S. P. DenBaars, and S. Nakamura, High light extraction efficiency nitride based light emitting diode by surface roughening, 2015.
Gelžinyt\.e, K., R. Ivanov, S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
Pourhashemi, A., RM. Farrell, DA. Cohen, JS. Speck, SP. DenBaars, and S. Nakamura, "High-power blue laser diodes with indium tin oxide cladding on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 106, no. 11: AIP Publishing, pp. 111105, 2015.
Ivanov, R., S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
Kyle, E. C. H., S. W. Kaun, E. C. Young, and J. S. Speck, "Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN", Applied Physics Letters, vol. 106, no. 22: AIP Publishing, pp. 222103, 2015.
Keller, S., C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, et al., "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
Kuritzky, L. Y., and J. S. Speck, "Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN", MRS Communications, vol. 5, no. 3: Cambridge University Press, pp. 463–473, 2015.
Nedy, J. G., N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
Shen, C., J. Leonard, A. Pourhashemi, H. Oubei, M. Sharizal Alias, T. Khee Ng, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
Shen, C., J. Leonard, A. Pourhashemi, H. Oubei, M. Sharizal Alias, T. Khee Ng, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
Piccardo, M., J. Iveland, L. Martinelli, S. Nakamura, J. Won Choi, J. S. Speck, C. Weisbuch, and J. Peretti, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
Kuritzky, L., D. Myers, K. Kelchner, S. Nakamura, S. DenBaars, C. Weisbuch, and J. Speck, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
D'evelyn, M. P., and J. S. Speck, Method for synthesis of high quality large area bulk gallium based crystals, 2015.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-III nitride films deposited on substrates, sep # " 8", 2015.

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