Publications

Found 2112 results
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2025
Wang, M., W. Gong, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "10.4% external quantum efficiency 294 nm UV LEDs at 20 A/cm^2 with a fully transparent tunnel junction", Optics Express, vol. 33, pp. 19876–19884, 2025.
Wang, M., S. Mu, J. S. Speck, and C. G. Van de Walle, "First-Principles Study of Twin Boundaries and Stacking Faults in β-Ga2O3", Advanced Materials Interfaces, vol. 12, pp. 2300318, 2025.
Rebollo, S., Y. Liu, C. Peterson, S. Krishnamoorthy, and J. S. Speck, "Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture", Applied Physics Letters, vol. 126, 2025.
Wissel-Garcia, A. E., F. Wu, and J. S. Speck, "Growth regimes of (0001) AlN by ammonia molecular beam epitaxy", Journal of Vacuum Science & Technology A, vol. 43, 2025.
Yapparov, R., A. Quevedo, T. Tak, S. Nakamura, S. P. DenBaars, J. S. Speck, and others, "Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs", Applied Physics Letters, vol. 126, 2025.
Wang, M., W. Gong, F. Wu, T. Tak, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer", Optics Express, vol. 33, pp. 19391–19398, 2025.
Huang, H. C., S. M. Chen, C. Weisbuch, J. S. Speck, and Y. R. Wu, "The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs", Applied Physics Reviews, vol. 12, 2025.
Krishnamoorthy, S., Y. Liu, S. Roy, and J. S. Speck, "(Invited) Novel Superheterojunctions for Ultra-Low Resistance Ga2O3 and GaN Power Switches", ECS Meeting Abstracts, vol. 248, pp. 1715, 2025.
Roy, S., C. N. Saha, C. Peterson, W. J. Mitchell, J. S. Speck, and S. Krishnamoorthy, "Multi-fin β-Ga2O3 Vertical FinFET with Interfin Field Oxide Exhibiting a Breakdown Voltage of 1.8 kV and Power Figure of Merit of 1 GW/cm^2", IEEE Electron Device Letters, vol. 47, pp. 341–344, 2025.
Roy, S., C. N. Saha, C. Peterson, W. J. Mitchell, J. S. Speck, and S. Krishnamoorthy, "Multi-fin β-Ga2O3 Vertical FinFET with Interfin Field Oxide Exhibiting a Breakdown Voltage of 1.8 kV and Power Figure of Merit of 1 GW/cm^2", IEEE Electron Device Letters, vol. 47, pp. 341–344, 2025.
Yapparov, R., M. S. Wong, T. Tak, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy", Applied Physics Letters, vol. 126, 2025.
Biegler, Z. J., A. A. Allerman, and J. S. Speck, "Removal of Si impurities from GaN regrowth interfaces using XeF$_2$", Applied Physics Letters, vol. 127, 2025.
Tak, T., W. Y. Ho, I. Celupica-Liu, Y. C. Chow, J. Peretti, C. Weisbuch, and J. S. Speck, "Trap-assisted Auger–Meitner recombination in GaN p-i-n diodes", Physical Review B, vol. 111, pp. 155308, 2025.
Tak, T., Y. C. Chow, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)N light-emitting diodes", Physical Review Applied, vol. 23, pp. 034002, 2025.
2024
Yapparov, R., T. Tak, J. Ewing, F. Wu, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Carrier Diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects", Applied Physics Letters, vol. 125, issue 3, 07/2024.
Hendricks, N. S., A. E. Islam, E. A. Sowers, J. Williams, D. M. Dryden, K. J. Liddy, W. Wang, J. S. Speck, and A. J. Green, "Current transport mechanisms of metal/TiO2/Beta-Ga2O3 diodes", Journal of Applied Physics, vol. 135, issue 9, 2024.
Hendricks, N. S., A. E. Islam, E. A. Sowers, J. Williams, D. M. Dryden, K. J. Liddy, W. Wang, J. S. Speck, and A. J. Green, "Current transport mechanisms of metal/TiO2/Beta-Ga2O3 diodes", Journal of Applied Physics, vol. 135, issue 9, 2024.
Quevedo, A., F. Wu, T-Y. Tsai, J. J. Ewing, T. Tak, S. Gandrothula, S. Gee, X. Li, S. Nakamura, S. P. DenBaars, et al., "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
Marcinkevičius, S., T. Tak, Y. Chao Chow, F. Wu, R. Yapparov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Dynamics of carrier injection through V-defects in long wavelength GaN LEDs", Applied Physics Letters, vol. 124, issue 18, 04/2024.
Rebollo, S., T. Itoh, S. Krishnamoorthy, and J. S. Speck, "Heated-H3PO4 etching of (001) Beta-Ga2O3", Applied Physics Letters, vol. 125, issue 1, 07/2024.
Wong, M. S., E. S. Trageser, H. Zhang, H-M. Chang, S. Gee, T. Tak, S. Gandrothula, C. Lee, J. S. Speck, S. Nakamura, et al., "III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Optics Express, vol. 32, issue 12, 06/2024.
Fornos, C., N. Alyabyeva, M. Sauty, W. Ying Ho, Y. Chao Chow, T. Tak, J. S. Speck, C. Weisbuch, Y. Lassailly, A. C. H. Rowe, et al., "Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs", Gallium Nitride Materials and Devices XIX, pp. PC1288608, 03/2024.
Fornos, C., N. Alyabyeva, M. Sauty, W. Ying Ho, Y. Chao Chow, T. Tak, J. S. Speck, C. Weisbuch, Y. Lassailly, A. C. H. Rowe, et al., "Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs", Gallium Nitride Materials and Devices XIX, pp. PC1288608, 03/2024.
Wong, M. S., S. Gee, T. Tak, S. Gandrothula, S. Rebollo, NG. Cha, J. S. Speck, and S. P. DenBaars, "Optical Analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation", Japanese Journal of Applied Physics, vol. 63, issue 4, 04/2024.
Tak, T., A. Quevedo, F. Wu, S. Gandrothula, J. J. Ewing, S. Gee, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.

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