Publications

Found 859 results
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2021
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wang, J., B. K. Saifaddin, C. J. Zollner, B. Bonef, A. S. Almogbel, Y. Yao, M. Iza, Y. Zhang, M. N. Fireman, E. C. Young, et al., "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
Wong, M. S., J. S. Speck, S. Nakamura, and S. P. DenBaars, "High efficiency of III-nitride and AlGaInP micro-light-emitting diodes using atomic layer deposition", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Li, P., A. David, H. Li, H. Zhang, C. Lynsky, Y. Yang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2\%", Applied Physics Letters, vol. 119, 12, 2021.
Li, P., A. David, H. Li, H. Zhang, C. Lynsky, Y. Yang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2\%", Applied Physics Letters, vol. 119, 12, 2021.
Li, P., H. Li, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation", Semiconductor Science and Technology, vol. 36, pp. 035019, 02/2021.
Kamikawa, T., S. Gandrothula, H. Li, B. V. Olivia, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Gallium Nitride Materials and Devices XVI: International Society for Optics and Photonics, 2021.
Chow, Y. C., C. Lynsky, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers", Applied Physics Letters, vol. 119, 11, 2021.
Lynsky, C., R. C. White, Y. Chao Chow, W. Ying Ho, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates", Journal of Crystal Growth, vol. 560-561, pp. 126048, 2021.
Gandrothula, S., T. Kamikawa, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser", Applied Physics Express, vol. 14, pp. 031002, feb, 2021.
Shi, J., A. Krishnan, A. F. M. Anha Bhuiyan, Y. Rui Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, et al., "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.
2020
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
Alkhazragi, O., C. H. Kang, M. Kong, G. Liu, C. Lee, K. Li, H. Zhang, J. M. Wagstaff, F. Alhawaj, T. K. Ng, et al., "7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector", IEEE Photonics Technology Letters, vol. 32, pp. 767-770, 2020.
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
Gandrothula, S., T. Kamikawa, M. Araki, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface", Applied Physics Express, vol. 13, pp. 041003, mar, 2020.
Lynsky, C., A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Barriers to carrier transport in multiple quantum well nitride-based $c$-plane green light emitting diodes", Phys. Rev. Materials, vol. 4, pp. 054604, May, 2020.
Smith, J. M., R. Ley, M. S. Wong, Y. Hyun Baek, J. Hun Kang, C. Hon Kim, M. J. Gordon, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter", Applied Physics Letters, vol. 116, pp. 071102, 2020.
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Alias, E. A., M. E. A. Samsudin, N. Ibrahim, A. J. Mughal, S. P. DenBaars, J. S. Speck, S. Nakamura, and N. Zainal, "Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate", J. Opt. Soc. Am. B, vol. 37, pp. 1614–1619, Jun, 2020.
Wong, M. S., J. A. Kearns, C. Lee, J. M. Smith, C. Lynsky, G. Lheureux, H. Choi, J. Kim, C. Kim, S. Nakamura, et al., "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments", Opt. Express, vol. 28, pp. 5787–5793, Feb, 2020.
Li, P., H. Zhang, H. Li, Y. Zhang, Y. Yao, N. Palmquist, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage", Semiconductor Science and Technology, vol. 35, pp. 125023, oct, 2020.

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