Publications
Found 522 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is C [Clear All Filters]
, "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane In x Ga 1- x N/ Ga N blue light emitting diodes fabricated on freestanding GaN substrates", Applied physics letters, vol. 89, no. 9: AIP, pp. 091906, 2006.
, "Quantitative observation and discrimination of AlGaN-and GaN-related deep levels in Al Ga N/ Ga N heterostructures using capacitance deep level optical spectroscopy", Applied physics letters, vol. 89, no. 26: AIP, pp. 262116, 2006.
, "Recombination dynamics of a 268 nm emission peak in Al 0.53 In 0.11 Ga 0.36 N/ Al 0.58 In 0.02 Ga 0.40 N multiple quantum wells", Applied Physics Letters, vol. 88, no. 11: AIP, pp. 111912, 2006.
, "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy", IEICE transactions on electronics, vol. 89, no. 7: The Institute of Electronics, Information and Communication Engineers, pp. 906–912, 2006.
, "Special Section on Heterostructure Microelectronics with TWHM2005-GaN-Based Devices-Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by", IEICE Transactions on Electronics, vol. 89, no. 7: Tokyo, Japan: Institute of Electronics, Information and Communication Engineers, c1992-, pp. 906–912, 2006.
, "Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8644, 2006.
, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
, "2.5 λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process", Applied Physics Letters, vol. 91, no. 6: AIP, pp. 061120, 2007.
, "AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 4L: IOP Publishing, pp. L284, 2007.
, "AlGaN/GaN HEMTs with large angle implanted nonalloyed ohmic contacts", Device Research Conference, 2007 65th Annual: IEEE, pp. 37–38, 2007.
, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
, "Characterization and Discrimination of AlGaN-and GaN-related Deep Levels in AlGaN/GaN Heterostructures", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 223–224, 2007.
, "CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", ?????????????????????, vol. 2007, no. 2: ??????????????, 2007.
, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol.(b) 244, No. 6, 1867–1871 (2007)]", physica status solidi (b), vol. 244, no. 12: Wiley Online Library, pp. 4692–4692, 2007.
, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.
, "Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L761, 2007.
, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
, "Demonstration of nonpolar m-plane InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L190, 2007.
, "Electrical and structural characterization of Mg-doped p-type Al 0.69 Ga 0.31 N films on SiC substrate", Journal of Applied Physics, vol. 101, no. 5: AIP, pp. 053717, 2007.
, "Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells", Lasers and Electro-Optics, 2007. CLEO 2007. Conference on: IEEE, pp. 1–2, 2007.
, "Excitation Wavelength Dependence Of Terahertz Emission From Indium Nitride Thin Films", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 513–514, 2007.