Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy

TitleReview of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2006
AuthorsCorrion, A., C. Poblenz, P. Waltereit, T. Palacios, S. Rajan, U. K. Mishra, and J. S. Speck
JournalIEICE transactions on electronics
Volume89
Pagination906–912