Publications

Found 522 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is C  [Clear All Filters]
2014
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
McSkimming, B. M., F. Wu, T. Huault, C. Chaix, and J. S. Speck, "Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h", Journal of Crystal Growth, vol. 386: Elsevier, pp. 168–174, 2014.
Chen, J., E. Xia Zhang, C. Xuan Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., Technique for the growth and fabrication of semipolar (Ga, Al, In, B) N thin films, heterostructures, and devices, 2014.
Sasikumar, A., DW. Cardwell, AR. Arehart, J. Lu, SW. Kaun, S. Keller, UK. Mishra, JS. Speck, JP. Pelz, and SA. Ringel, "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs", Reliability Physics Symposium, 2014 IEEE International: IEEE, pp. 2C–1, 2014.
2015
Lee, C., C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. Khee Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, et al., "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
Lee, C., C. Zhang, M. Cantore, R. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation", Summer Topicals Meeting Series (SUM), 2015: IEEE, pp. 228–229, 2015.
Lee, C., C. Zhang, M. Cantore, R. M. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication", Optics express, vol. 23, no. 12: Optical Society of America, pp. 16232–16237, 2015.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
Megalini, L., D. L. Becerra, R. M. Farrell, A. Pourhashemi, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. A. Cohen, "Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture", Applied Physics Express, vol. 8, no. 4: IOP Publishing, pp. 042701, 2015.
Nguyen, X. Sang, K. Lin, Z. Zhang, B. McSkimming, AR. Arehart, JS. Speck, SA. Ringel, E. A. Fitzgerald, and SJ. Chua, "Correlation of a generation-recombination center with a deep level trap in GaN", Applied Physics Letters, vol. 106, no. 10: AIP Publishing, pp. 102101, 2015.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, T. Margalith, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
McSkimming, B. M., C. Chaix, and J. S. Speck, "High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 5: AVS, pp. 05E128, 2015.
Pourhashemi, A., RM. Farrell, DA. Cohen, JS. Speck, SP. DenBaars, and S. Nakamura, "High-power blue laser diodes with indium tin oxide cladding on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 106, no. 11: AIP Publishing, pp. 111105, 2015.
Keller, S., C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, et al., "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
Piccardo, M., J. Iveland, L. Martinelli, S. Nakamura, J. Won Choi, J. S. Speck, C. Weisbuch, and J. Peretti, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
Craven, M. D., and J. Stephen Speck, Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition, may # " 26", 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
Speck, J. S., and D. A. Cohen, "Prospects for high power nonpolar and semipolar GaN-based laser diodes", High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE: IEEE, pp. 1–2, 2015.
Zhang, Z., AR. Arehart, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 2: AIP Publishing, pp. 022104, 2015.
Megalini, L., L. Y. Kuritzky, J. T. Leonard, R. Shenoy, K. Rose, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 066502, 2015.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, SP. DenBaars, JS. Speck, and S. Nakamura, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
Galiano, K., D. Gleason, P. Krishna Paul, Z. Zhang, D. Cardwell, B. McSkimming, J. Speck, A. Arehart, S. Ringel, and J. Pelz, "Spatial Localization and Variation in Defect-Related Electron Traps in GaN Materials", Bulletin of the American Physical Society: APS, 2015.

Pages