Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

TitleProton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
Publication TypeJournal Article
Year of Publication2015
AuthorsZhang, Z., AR. Arehart, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel
JournalApplied Physics Letters
Volume106
Pagination022104