Publications

Found 1586 results
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2019
Zollner, C. J., A. Almogbel, Y. Yao, B. K. SaifAddin, F. Wu, M. Iza, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 115, pp. 161101, 2019.
Kang, C. Hong, G. Liu, C. Lee, O. Alkhazragi, J. M. Wagstaff, K-H. Li, F. Alhawaj, T. Khee Ng, J. S. Speck, S. Nakamura, et al., "Semipolar (202̅1̅) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication", Applied Physics Express, vol. 13, pp. 014001, nov, 2019.
Mehari, S., D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III-nitride laser diodes for solid-state lighting", Novel In-Plane Semiconductor Lasers XVIII: International Society for Optics and Photonics, 2019.
Wong, M. S., C. Lee, D. J. Myers, D. Hwang, J. A. Kearns, T. Li, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation", Applied Physics Express, vol. 12, pp. 097004, aug, 2019.
Alema, F., B. Hertog, P. Mukhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. V. Schoenfeld, J. S. Speck, and T. Vogt, "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film", APL Materials, vol. 7, pp. 022527, 2019.
Smirnov, A. M., E. C. Young, V. E. Bougrov, J. S. Speck, and A. E. Romanov, "Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin", Journal of Applied Physics, vol. 126, pp. 245104, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "VUV Frequency Comb by Cavity-Enhanced High Harmonic Generation on Solid Surfaces", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
2020
Lheureux, G., C. Lynsky, Y-R. Wu, J. S. Speck, and C. Weisbuch, "A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes", Journal of Applied Physics, vol. 128, pp. 235703, 2020.
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
Alkhazragi, O., C. H. Kang, M. Kong, G. Liu, C. Lee, K. Li, H. Zhang, J. M. Wagstaff, F. Alhawaj, T. K. Ng, et al., "7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector", IEEE Photonics Technology Letters, vol. 32, pp. 767-770, 2020.
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
Gandrothula, S., T. Kamikawa, M. Araki, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface", Applied Physics Express, vol. 13, pp. 041003, mar, 2020.
Lynsky, C., A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Barriers to carrier transport in multiple quantum well nitride-based $c$-plane green light emitting diodes", Phys. Rev. Materials, vol. 4, pp. 054604, May, 2020.
Smith, J. M., R. Ley, M. S. Wong, Y. Hyun Baek, J. Hun Kang, C. Hon Kim, M. J. Gordon, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter", Applied Physics Letters, vol. 116, pp. 071102, 2020.
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 117, pp. 152105, 2020.
Wurm, C., E. Ahmadi, F. Wu, N. Hatui, S. Keller, J. Speck, and U. Mishra, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.
Alema, F., Y. Zhang, A. Mauze, T. Itoh, J. S. Speck, B. Hertog, and A. Osinsky, "H2O vapor assisted growth of β-Ga2O3 by MOCVD", AIP Advances, vol. 10, pp. 085002, 2020.
Jorgensen, K. F., B. Bonef, and J. S. Speck, "High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films", Journal of Crystal Growth, vol. 546, pp. 125738, 2020.
Alias, E. A., M. E. A. Samsudin, N. Ibrahim, A. J. Mughal, S. P. DenBaars, J. S. Speck, S. Nakamura, and N. Zainal, "Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate", J. Opt. Soc. Am. B, vol. 37, pp. 1614–1619, Jun, 2020.
Aleksiejūnas, R., K. Nomeika, O. Kravcov, S. Nargelas, L. Kuritzky, C. Lynsky, S. Nakamura, C. Weisbuch, and J. S. Speck, "Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane InGaN Quantum Wells", Phys. Rev. Applied, vol. 14, pp. 054043, Nov, 2020.
Zhang, Y., and J. S. Speck, "Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices", Semiconductor Science and Technology, vol. 35, pp. 125018, oct, 2020.
Wong, M. S., J. A. Kearns, C. Lee, J. M. Smith, C. Lynsky, G. Lheureux, H. Choi, J. Kim, C. Kim, S. Nakamura, et al., "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments", Opt. Express, vol. 28, pp. 5787–5793, Feb, 2020.

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